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| MITSUBISHI IGBT MODULES CM200DU-12F HIGH POWER SWITCHING USE CM200DU-12F IC ................................................................... 200A VCES ............................................................ 600V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 94 7 17 80 0.25 23 23 2-6.5 MOUNTING HOLES 4 E2 G2 24 C2E1 E2 C1 18 G1E1 4 11 48 24 27 24 12 3-M5NUTS 12mm deep 16 2.5 25 2.5 16 13.5 E2 G2 E2 RTC TAB #110. t=0.5 7.5 C2E1 4 13 30 -0.5 +1 21.2 LABEL CIRCUIT DIAGRAM Feb. 2009 G1 E1 CM RTC C1 MITSUBISHI IGBT MODULES CM200DU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 600 20 200 400 200 400 590 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W C C Vrms N*m N*m g (Note 2) (Note 2) Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = 15V RG = 3.1, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25C Tj = 125C Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.1 Limits Typ. -- 6 -- 1.6 1.6 -- -- -- 1240 -- -- -- -- -- 3.8 -- -- -- 0.07 -- -- Max. 1 7 20 2.2 -- 54 3.6 2.0 -- 120 100 350 250 150 -- 2.6 0.21 0.35 -- 0.15*3 31 Unit mA V A V nF nF nF nC ns ns ns ns ns C V K/W K/W K/W K/W Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25C Tj = 125C 0 100 200 300 400 400 COLLECTOR CURRENT IC (A) Tj=25C 350 300 250 200 150 100 50 7.5 0 0 0.5 1 1.5 2 8 VGE=20V 15 11 10 9.5 9 8.5 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 5 Tj = 25C EMITTER CURRENT IE (A) Tj = 25C 4 3 2 102 7 5 3 2 3 IC = 400A IC = 200A IC = 80A 2 101 7 5 3 2 1 0 6 8 10 12 14 16 18 20 100 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Cies SWITCHING TIMES (ns) td(off) tf td(on) 101 7 5 3 2 102 7 5 3 2 Coes Cres VGE = 0V 100 7 5 3 2 101 7 5 3 2 tr Conditions: VCC = 300V VGE = 15V RG = 3.1 Tj = 125C 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DU-12F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.21K/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.35K/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 102 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) 7 5 Irr trr 101 7 5 3 2 Conditions: VCC = 300V VGE = 15V RG = 3.1 Tj = 25C 2 3 5 7 102 2 3 5 7 103 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 Single Pulse TC = 25C 100 1 10 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 IC = 200A VCC = 200V VCC = 300V 0 200 600 1000 1400 1800 GATE CHARGE QG (nC) Feb. 2009 4 |
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